Buried Interfaces in Halide Perovskite Photovoltaics

Yang, XY; Luo, DY; Xiang, YR; Zhao, LC; Anaya, M; Shen, YL; Wu, J; Yang, WQ; Chiang, YH; Tu, YG; Su, R; Hu, Q; Yu, HY; Shao, GS; Huang, W; Russell, TP; Gong, QH ; Stranks, SD; Zhang, W ; Zhu, R 

Tipo: Artículo
Año de Publicación: 2021
Volumen: 33
Número: 7
Número de artículo: 2006435
Acceso abierto: Vía verde
Fuente Nº Citas Fecha Actualización
scopus14827-05-2023
wos13828-05-2023
Dimensions
PlumX
Altmetric

Año: 2021

Journal Impact Factor (JIF): 32,086

CategoríaEdiciónPosiciónCuartilTercilDecil
CHEMISTRY, MULTIDISCIPLINARYSCIE5/179Q1T1D1
CHEMISTRY, PHYSICALSCIE4/165Q1T1D1
MATERIALS SCIENCE, MULTIDISCIPLINARYSCIE8/345Q1T1D1
NANOSCIENCE & NANOTECHNOLOGYSCIE3/109Q1T1D1
PHYSICS, APPLIEDSCIE5/161Q1T1D1
PHYSICS, CONDENSED MATTERSCIE2/69Q1T1D1

Año:

2021

CiteScore:

47,700

CategoríaPosiciónCuartilTercilDecil
Materials Science (all)4/455Q1T1D1
Mechanical Engineering2/601Q1T1D1
Mechanics of Materials2/384Q1T1D1

SJR año:

2021

Factor de Impacto:

8,663

CategoríaPosiciónCuartilTercilDecil
Materials Science (miscellaneous)5/586Q1T1D1
Mechanical Engineering2/604Q1T1D1
Mechanics of Materials2/386Q1T1D1
Nanoscience and Nanotechnology2/79Q1T1D1
No existen datos para la revista de esta publicación.
Agencia Código de Proyecto
China Postdoctoral Science FoundationBX20190018; 2018M633128
DOE, Office of Science and Office of Basic Energy Sciences-
EPSRCEP/R023980/1; EP/R043272/1
EPSRC New Investigator AwardEP/R043272/1
European Union841386
Marie Skodowska-Curie Individual Fellowships839136
National Basic Research Program of China (973Program)2015CB932203
National Natural Science Foundation of China61722501; 91733301; 62004165; 11527901; 51602290
Office of Science, Office of Basic Energy Sciences, the U.S. Department of EnergyDE-AC02-05CH11231
Research and Application of Key Technologies of GaN-based Power Devices on Si Substrate2019B010128001
research of AlGaN HEMT MEMS sensor for work in extreme environmentJCYJ20170412153356899
Royal Society-
Shenzhen Basic Research ProjectJCYJ20170818142926085
Shenzhen Institute of the Third Generation Semiconductors, Basic Research Institution of City of Shenzhen-
study and optimization of electrostatic discharge mechanism for GaN HEMT devicesJCYJ20180305180619573
SUSTech Presidential Postdoctoral Fellowship-
Tata GroupUF150033
US Office of Naval ResearchN00014-15-1-2244
Zhengzhou University 2019 key program for discipline constructionXKZDJC201903
Nota: los datos sobre financiación provienen de la WOS
# Autor
1Yang, XY
2Luo, DY
3Xiang, YR
4Zhao, LC
5Anaya, M
6Shen, YL
7Wu, J
8Yang, WQ
9Chiang, YH
10Tu, YG
11Su, R
12Hu, Q
13Yu, HY
14Shao, GS
15Huang, W
16Russell, TP
17Gong, QH 
18Stranks, SD
19Zhang, W 
20Zhu, R