Jorge Alejandro Budagosky Marcilla

Profesor Sustituto Interino
jbudagosky@us.es
Área de conocimiento: Física Aplicada
Departamento: Física Aplicada I
Grupo: Sin Grupo
Tipo Año Título Fuente
Artículo2022 Coarse-grained approach to amorphous and anisotropic materials in kinetic Monte Carlo thin-film growth simulations: a case study of TiO2 and ZnO by plasma-enhanced chemical vapor deposition PLASMA PROCESSES AND POLYMERS
Artículo2022 Multiscale kinetic Monte Carlo simulation of self-organized growth of GaN/AlN quantum dots NANOMATERIALS
Artículo2019 All-electron product basis set: application to plasmon anisotropy in simple metals PHYSICAL REVIEW B
Artículo2019 Angle-resolved secondary photoelectron emission from graphene interfaces PHYSICAL REVIEW B
Artículo2017 Cross-section geometry effects in the subband structure and spin-related properties of a HgTe/CdTe nanowire PHYSICAL REVIEW B
Artículo2016 Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field Materials Science in Semiconductor Processing
Artículo2016 Optimal control with nonadiabatic molecular dynamics: application to the Coulomb explosion of sodium clusters PHYSICAL REVIEW A
Artículo2016 Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field Materials Science in Semiconductor Processing
Artículo2016 Shaped electric fields for fast optimal manipulation of electron spin and position in a double quantum dot PHYSICAL REVIEW B
Artículo2015 Ultrafast single electron spin manipulation in 2D semiconductor quantum dots with optimally controlled time-dependent electric fields through spin-orbit coupling EUROPEAN PHYSICAL JOURNAL B
Artículo2014 Optimal control of high-harmonic generation by intense few-cycle pulses PHYSICAL REVIEW A
Artículo2012 Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation JOURNAL OF APPLIED PHYSICS
Artículo2011 Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: the effect of temperature JOURNAL OF CRYSTAL GROWTH
Artículo2010 Reversed polarized emission in highly strained a-plane GaN/AlN multiple quantum wells PHYSICAL REVIEW B
Ponencia2009 Anisotropic polarization of non-polar GaN quantum dot emission PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2
Artículo2009 Depth profiling of optical and vibrational properties in GaN/AlN quantum dot superlattices PHYSICA STATUS SOLIDI B-BASIC RESEARCH
Artículo2008 Temperature dependence of the E-2h phonon mode of wurtzite GaN/AlN quantum dots JOURNAL OF APPLIED PHYSICS
Artículo2007 Evaluation of strain in GaN/AlN quantum dots by means of resonant Raman scattering: the effect of capping PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007
Artículo2006 Influence of strain in the reduction of the internal electric field in GaN/AIN quantum dots grown on a-plane 6H-SiC PHYSICA STATUS SOLIDI B-BASIC RESEARCH
Artículo2006 Mechanism of GaN quantum dots capped with AlN: an AFM, electron microscopy, and x-ray anomalous diffraction study PHYSICAL REVIEW B
Ponencia2005 Reduction of the internal electric field in GaN/AlN quantum dots grown on the a-plane of SiC substrates PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL. 2 , NO 11
Artículo2005 Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots APPLIED PHYSICS LETTERS
Artículo2003 Ginzburg-Landau functional for metals with spin-charge separation: effect of the mass renormalization ACTA PHYSICA POLONICA B
Artículo2002 Ginzburg-Landau expansion in non-Fermi-liquid superconductors: effect of the mass renormalization factor PHYSICAL REVIEW B
Este investigador no ha dirigido/tutorizado tesis

Proyectos de Investigación

Fecha de inicio Fecha de fin Rol Denominación Agencia financiadora
01/01/2022 31/05/2023 Investigador/a Nueva generación de nanorecubrimientos dieléctricos conformales para dispositivos electrónicos emergentes por tecnología de plasma (PlasmaDielec) (US-1381057) Consejería de Economía, Conocimiento, Empresas y Universidad (Autonómico)
El investigador no tiene ningún resultado de investigación asociado